IBM Announces 5nm Breakthrough Using Silicon Nanosheets

IBM-Feature

IBM’s newest 5nm achievement illustrates the promise of new manufacturing technologies and the long-term usefulness of gate-all-around FET structures.

The post IBM Announces 5nm Breakthrough Using Silicon Nanosheets appeared first on ExtremeTech.

The original article can be found here: https://www.extremetech.com/computing/250424-ibm-announces-5nm-breakthrough-claims-silicon-nanosheet-technology-will-drive-future-performance-power-efficiency-improvements?source=Computing

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Why You Should Still Care About Moore's Law


Ironically, the greater IT accomplishments become, the harder they are to see. Consider Intel’s latest achievement: the new Broadwell architecture that shrank microprocessor manufacturing from the previous generation 22nm Haswell process to 14nm. Since a nanometer is a millionth of a millimeter — a human hair is about 100,000nm thick — you’d be hard pressed to tell the difference without an electron microscope. Practically speaking, though, Broadwell increases the number of transistors Intel can squeeze onto a microprocessor by a third.

The original article can be found here: http://www.ecommercetimes.com/story/80913.html?rss=1

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