New advances in directed self-assembly could push silicon below 10nm more efficiently than EUV

Intel Foundry

A new paper claims that directed self-assembly could be key to patterning lines below 10nm, but line-edge roughness and manufacturing challenges still present substantial barriers.

The post New advances in directed self-assembly could push silicon below 10nm more efficiently than EUV appeared first on ExtremeTech.

The original article can be found here: https://www.extremetech.com/computing/246599-new-advances-directed-self-assembly-push-silicon-10nm-efficiently-euv?source=Computing

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